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Silicon-on-Insulator (SOI) CMOS technology is becoming another mainstream technology for VLSI. Owing to its inherited characteristics, SOI CMOS technology is especially capable of providing deep-submicron VLSI devices for next-generation highspeed, low-power, system applications using a low-power supply voltage. Thanks to progresses in processing technology, SOI CMOS technology has been used to implement multi-giga-bit DRAM, 1 GHz microprocessors, and other high-speed low-power computer-related VLSI circuits. Owing to much smaller parasitic capacitances, SOI CMOS devices have also been used to integrate high-speed low-power networkrelated telecommunication VLSI circuits. Recently, the demands on low-voltage VLSI circuit designs using deep-submicron SOI CMOS technology have grown dramatically. However, nowadays the development of the supporting environment for meeting the demands on the growth of the SOI CMOS 1C designs for VLSI system applications is not paced accordingly. The microelectronics industry is interested in becoming familiar with the SOI CMOS device behaviors and SOI CMOS circuit design skills and needs concise device models for SOI SPICE CAD and breakthroughs in SOI CMOS circuits. In order to help overcome the bottlenecks for the escalated development of the SOI CMOS technology for VLSI system applications, this book is the first on SOI, that provides a comprehensive description of low-voltage SOI CMOS VLSI devices and circuits. This book includes up-to-date structures and behaviors of the state-of-the-art SOI CMOS devices. In addition, a wide spectrum of SOI CMOS digital and analog circuits targeted for low-voltage, low-power, highspeed VLSI system applications such as logic, memory, CPU, telecommunications, etc, are described. In the final portion, CMOS SOI Technology SPICE models for circuit simulations are presented. This book is written for high-tech professionals interested in microelectronics and/or CMOS VLSI and is also suitable for first-year graduate students interested in VLSI. The arrangement of the book is designed for a three semester unit course