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The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits.
Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
The continuous scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) circuit design techniques and system architectures. In 1965, Gordon Moore, one of the eminent scientists in Silicon Valley and co-founder of the Intel Corporation, anticipated the growing trend of transistors in integrated circuits (ICs). He speculated that the active transistor count in IC would be magnified twice every 18–24 months. Since then, the number of transistors has risen dramatically in an IC according to Moore’s trend, and tremendous growth has been seen wherein the technology has escalated from small scale to large, ultra-large, and eventually to the giga-scale integration. In order to develop more compressed, budget-friendly, and sophisticated ICs, ‘More Moore’ (Mm) and ‘More than Moore’ (Mtm) concepts have evolved in the past few years.
The 14 chapters of the book are classified under four sections that cover modeling, simulation, and applications of electronic, magnetic, and compound semiconductors in nanoelectronic devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, potential NWFETs, TFETs, and their applications from the viewpoint of nano-scale ICs and their application. The book shall serve as an invaluable reference for graduate students, Ph.D./M.S./M.Tech. scholars, researchers, and practicing engineers working on the frontier of nano-scale VLSI designs, circuits, systems, and their applications