Externally indexed torrent

If you are the original uploader, contact staff to have it moved to your account

Textbook in PDF format

The book starts with a short comparison between bipolar and MOS analog circuits. The main differences between bipolar and MOS transistors are emphasized, since superficial similarities between them often lead to erroneous results. The drawbacks of some classical MOS field-effect-transistor (FET) models, particularly those related to the choice of the source terminal as the reference, are explained. Chapter 2 presents an accurate model for the MOS transistor. Large- and small-signal models for low and high frequency, which are valid in all the operating regions, are presented. The important concept of inversion level is developed and explicit expressions for all large- and small-signal parameters of transistors in terms of the inversion levels are provided. The main small-geometry effects are summarized. An overview of CMOS technology for designers and the basic properties of passive devices in CMOS technology are the subjects of Chapter 3. The models for integrated resistors and capacitors are developed
with the necessary depth for analog design. Some good practices for designing MOS transistor layouts are summarized. Chapter 4 gives a unified modeling for mismatch and noise. With the shrinking of the MOSFET dimensions and reduction in the supply voltage of advanced technologies, the consideration of matching and noise has become even more important for analog design. Thus, we have included a detailed presentation of
mismatch and noise in Chapter 4 so that they can be considered in the subsequent study of the basic circuits and building blocks. Chapter 5 starts with the simple current mirror, one of the basic building blocks of analog circuits. The main cascode configurations and some advanced mirror topologies are then presented. We make a complete large- and small-signal analysis and include errors due to finite output resistance, mismatch, and noise. Chapter 6 deals with current sources and voltage references. Self-biased current sources and voltage references are described, emphasizing bandgap references. The whole chapter is dedicated to the basic bias building blocks, because bias and dc behavior are of the utmost importance in relation to analog circuits. In Chapter 7 the basic gain stages are described. Commonsource, common-gate, source-follower, cascode, and differential amplifiers are thoroughly analyzed. The use of an all-region one-equation MOSFET model allows the complete exploration of the design space, and the choice of the best operating region (weak, moderate, or strong inversion) for each transistor involved. The important topic of CMOS design scaling and reuse is summarized at the end of the chapter. Chapter 8 deals with the design of operational amplifiers. The main topologies used inCMOS technology are presented, including single- and two-stage operational amplifiers. Fully differential amplifiers, including the folded-cascode type, and common-mode feedback circuits are described. The following two chapters of the book introduce the basic circuit techniques for frequency-selective filters and some building blocks for data converters. In Chapter 9 the MOSFET-C filter technique derived from active RC filters is presented, followed by the basics of operational transconductance amplifier-capacitor (OTA-C) filters, including onchip tuning circuits. Digitally-programmable filters using MOSFET-only current dividers (MOCDs) are also discussed. In Chapter 10, following the analysis of analog MOS switches and sample-and-hold circuits, sampled-data techniques are introduced. Switched-capacitor building blocks for integrated filters and converters are described. The important topic of switched-capacitor filters fully compatible with digital MOS technology is covered. Finally, some complementary modeling topics considered important for circuit design are summarized in the appendices. Chapter 11 provides an overview of compact MOSFET models, which play a significant role in the analysis and design of integrated circuits. This chapter also describes some procedures employed to extract fundamental design parameters associated with the MOSFET model used in this textbook