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This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.
Introduction
Thermal Fatigue Failure Mechanism of IGBT Module
Thermal Model and Thermal Parameter Monitoring
Junction Temperature Extraction of the Power Semiconductor Device
Multi-time Scale Lifetime Evaluation of the Device in the Renewable Energy System
Thermal Management Method and Optimization
Prospect