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Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:
- Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices
- Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs
- Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices
- Includes rigorous mathematical derivations of the semiconductor physics
- Illustrates major concepts thorough discussions and various diagrams?
Preface
Fundamentals of Nanoscale Electronic Devices
Carbon Nanotubes and Their Device Applications
Electronic Transport Properties of Doped Carbon Nanotube Devices
Field-Effect Transistors Based on Graphene and Other Popular Two-Dimensional Materials
Gate and Channel Engineered Nanoscale Electronic Devices
Spin Nanoscale Electronic Devices and Their Applications
Phase-Change Devices and Their Applications