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"Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)." -- Provided by publisher.
Preface
Author Biography
Introduction
Semiconductor Physics
Physics and Properties of Semiconductors—A Review
Device Building Blocks
p–n Junctions
Metal–Semiconductor Contacts
Metal–Insulator–Semiconductor Capacitors
Transistors
Bipolar Transistors
MOSFETs
Nonvolatile Memory Devices
JFETs, MESFETs, and MODFETs
Negative‐Resistance And Power Devices
Tunnel Devices
IMPATT Diodes, TED, and RST Devices
Thyristors and Power Devices
Photonic Devices And Sensors
LEDs and Lasers
Photodetectors and Solar Cells
Sensors
Appendices
Appendix A List of Symbols
Appendix BInternational System of Units
Appendix CUnit Prefixes #
Appendix DGreek Alphabet
Appendix EPhysical Constants
Appendix FProperties of Important Semiconductors
Appendix GThe Bloch Theorem and the Periodic Energy in the Reciprocal Lattice
Appendix H Properties of Si and GaAs
Appendix IThe Derivations of Boltzmann Transport Equation and Hydrodynamic Model
Appendix JProperties of SiO2 and Si3N4 P
Appendix KCompact Models of Bipolar Transistors
Appendix LDiscovery of the Floating-Gate Memory Effect
References
Index