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This work presents the design, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar technologies. The applicability of a standard digital 0.13 μm CMOS technology for realization of a 24 GHz narrowband radar front-end sensor is investigated. The unlicensed industrial, scientific and medical (ISM) frequency band at 24 GHz is particularly interesting for radar applications, due to its worldwide availability and the possibility of inexpensive packaging in this frequency range. The low-noise amplifier (LNA) and mixer receiver building blocks have been designed in CMOS and bipolar technologies. These building blocks have been integrated into receiver and transceiver front-ends. The performance stability of the circuits is compared over a very wide temperature range from -40 to 125 ◦C. Additionally, ESD protection techniques are considered. Further, advanced modeling and de-embedding techniques, required for accurate circuit characterization, are investigated. The presented circuits are suitable for automotive, industrial and consumer applications, as e.g. lane-change assistant, door openers or alarms. This manuscript is based on the dissertation entitled ”Microwave Circuits for 24 GHz Radar Front-End Applications in CMOS and Bipolar Technologies” submitted to the University of Paderborn. The research work was supported under the German BMBF funded project EMCpack/FASMZS 16SV3295 and was carried out in close collaboration with Infineon Technologies AG, Neubiberg, Germany